markz said:
Could you give an example of a proper way for a 2S or 3S bms to be built, and then have the ability to put multiples together and still have the same safety factor.
bms1.jpg
Of course, there's 2 ways to go about it.
The best way to build a modular system like that, is to use a chip that was designed to be "stackable". The chips will directly communicate to its above and below neighbors, so if one chip is dead/faulty, the entire output is shut off.
Daisy-chainable BMS chips are not very common though. The only options I can find are from TI, and there's only 4 of them, the minimum in each stack is 3.
http://www.ti.com/power-management/battery-management/protectors/products.html#p2192=Stackable%20(built-in%20interface)
Alternatively, use individually protected cells. This is more expensive and less efficient than the above method, but it is definitely safe. Essentially each cell has its own pair of FETs and 1S IC (how the DW01 is supposed to be used).
These 1S DW01 and similar ICs are made to go into phones and flashlights that will only ever have 1S connections. They're specifically made to interface to a single cell's N-channel FETs directly, not to PNPs in a daisy chain configuration.
The PNPs are "active low" devices, so when the output of the DW01 is high (no OVP or UVP triggered) the PNPs are allowing current to flow, turning the FETs at the bottom on. If there is an OVP or UVP, the DW01 pulls the base of the PNP low, blocking the current and turning off the FETs. The hazard lies that if one DW01 is damaged, the corresponding PNPs will not block the current, which will allow the cells to overcharge/undercharge.
By comparison the N-channel FETs are "active high", so if the DW01 is damaged, it works like a dead-man's switch. The FETs shut off, regardless if OVP or UVP conditions are present.