I humbly claim neophyte status in power electronics. Switching power FETs is new to me (first project). My limited grasp is as follows:
In IGBT-land the capacitor serves multiple functions.
The first is to reduce the miller-C induced blip on the gate voltage when the other transistor turns on and rapidly wrenches up the collector (or drain) voltage. This Vge blip can cause totem-pole shoot-through and can be hard to control by gate resistor value alone without compromising other aspects of switching. The add-on capacitor forms a capacitive divider with the miller C.
Another function is to slow the rise time of Vge at turn-on during the period BETWEEN Vge reaching VgeTH (where the IGBT starts to conduct) and when Vge reaches the miller plateau (when the IGBT has taken over the full inductive load current from the diode and the collector voltage is now starting to ramp down). By slowing this part of the Vge waveform, the freewheel diode is dragged into the reverse-biased state more gently, reducing savagery of the tRR reverse recovery current transient. The capacitor should have no effect during the Vge miller plateau region, because the voltage across it is not changing significantly, therefore no current is flowing through it.
My quest is to be able to calculate the capacitor value algebraically, and fine tune it by waveform observation. Of course this interacts with every other part of the inverter stage.
I thought this FET/IGBT power game would be easy, after all these things only have 3 leads, how hard can it be to just turn 'em on & off? I am beginning to appreciate the skill of the cogniscenti. I bend the knee and doff the cap, eyes downcast, my hands where you can see them.