After receiving my YK42-3 36v Controller, I decided to crack its case, examine and photograph its innards. The first thing I noticed was the FETs. They are F1010E, not the 2SK3435 seen in other YK42-3 units. The pictures for mine, and the FET specs for both can be compared below. I originally planned to mod or eliminate the LVC (to allow 24v use), but decided instead to increase my supply voltage to 36v - providing my motor can safely handle the increased voltage. (edit - I modified image size so refresh your cache)
(FETs) IRF1010E (my YK42-3 - 36v shown above)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59 A
IDM Pulsed Drain Current 330 A
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.4 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
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(FETs) 2SK3435 (other YK42-3 - 36v units)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±80 A
Drain Current (pulse) ±160 A
Total Power Dissipation (TC = 25°C) PT 84 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 ISA 31 A
Single Avalanche Energy Note2 EAS 96 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V




(FETs) IRF1010E (my YK42-3 - 36v shown above)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59 A
IDM Pulsed Drain Current 330 A
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.4 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
-----------------------------------------
(FETs) 2SK3435 (other YK42-3 - 36v units)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±80 A
Drain Current (pulse) ±160 A
Total Power Dissipation (TC = 25°C) PT 84 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 ISA 31 A
Single Avalanche Energy Note2 EAS 96 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V