IRFB 4110 FETs, like any other FET (or semiconductor device, come to that) have a multitude of interactive limits that have to be taken into account. The spec sheet isn't that easy to decode without knowing the way that different operating conditions interact.
Working through the data for this device (from the IR datasheet, attached):
The maximum current that the silicon on the device can take is 180A, but if you look closely you will see that there is a small footnote, 1, linked to that parameter that states that there is a package limit of 75A, so the true maximum current is theoretically 75A, not 180A.
Next you need to look at two other device parameters, Rdson (the 'on' resistance of the FET) and the thermal resistance, Rthjc and Rthcs.
Rdson gives you a way to calculate the power, in the form of heat, that the junction will generate when the FET is turned on and conducting current. Let's assume that the current flowing through the FET is the package limit of 75A and the junction temperature is 25 deg C. At the typical value of Rdson (0.0037 ohms) the power being lost in the silicon will be 75² x 0.0037 = 20.8W.
Knowing the initial power that the junction has to dissipate, we can now work through the temperature rise that it will produce. The two figures of Rthjc and Rthcs can be added to give the total thermal resistance from the junction to the heatsink. A good heatsink (bigger and heavier than the ones typically used on controllers) might have a thermal resistance of maybe 2 deg C per watt. This would give us a total thermal resistance of around 0.402 + 0.5 + 2 = 2.902 deg C per watt.
So, for our 20.8W the junction temperature will increase to 20.8 x 2.902 = 60.36 deg above it's initial temperature, making the junction temperature around 85 deg C.
It doesn't end there though, as if you look at the way that Rdson varies with temperature (fig 4 on the data sheet), then you'll find that it will be around 1.5 times the value at 85 deg C that it was at 25 deg C. This means that the heat being generated at the junction is now 75² x 0.0037 x 1.5 = 31.2W. With 31.2W of heat being created the junction temperature rises further to 31.2 x 2.902 = 90.5 deg C above the initial temperature, or about 115 deg C.
As you can probably guess by now, this process is running away. The more heat at the FET junction, the higher the Rdson and the greater the heat generated. Unless something is done to reduce the current the device will exceed it's junction temperature limit quite quickly and then fail.
The intelligent way to stop this happening, if you have to use FETs with such poor package thermal limitations, is to have a means of rolling back the current limit with FET temperature. This would provide a measure of protection to the controller from conditions, like sustained hill climbing, where the controller may be running hard on the current limit for long periods. This is hard to do with these small package FETs though, because the case temperature will always lag the junction temperature by a fair bit, due to the poor package thermal resistance. There is a time factor in this, too. Short bursts of high phase current may be fine, as they won't generate a sustained temperature rise in the FETs. The FETs can take junction temperatures up to 175 deg C for moderate periods of time, but obviously their performance at that high junction temperature is very much poorer (Rdson would be around 2.5 times greater, for example, meaning much higher controller losses).
Thankfully, the collective knowledge on here is far greater than it was a few years ago when Doc started making mega-controllers from Chinese parts that we didn't wholly understand at the time!
Jeremy
View attachment 232-20788-IRFB4110PbF.pdf