boostjuice
10 kW
phyllis said:Here are some 75v FETs, package current limit for IXFZ520N075T2 isn't listed
From the datasheet;
I(A), TC = 25°C, 200 A = same thing as 'package limit' ?
http://mt-system.ru/documents/ixfz520n075t2.pdf
phyllis said:Are any of those IXYS better than IRFP4368?
There's not a whole lot between them in terms of RDSon. Silicon/wafer current capability is irrelevant unless there is a clear advantage in the package leads current handling capacity.
However, the alternative packages to TO-247/TO-264 do tend to offer slightly lower thermal resistance between Junction>Case & Case>Sink. The key thing is though, that the ones that feature an electrically isolated mounting face offer a more substantial improvement in real-world heat removal performance than a comparison of the summed quoted numbers Rth(JC)+Rth(CS) alone would suggest. The quoted Rth(CS), is for an electrically connected thermal pathway - using thermal grease only to fill the small pores between the metallic interface. For most controllers though, the addition of a silicon pad/Kapton tape must be included for electrical isolation reasons, and the thermal resistance of this is huge compared with the quoted value of Rth(CS).
Models MMIX1F520N075T2, IXFZ520N075T2 IXFN520N075T2 all feature ultra thin, funky chemical, internal electrical isolation between the silicon substrate and the casing thermal interface. So as far as conducting heat out of the wafer and into the heatsink, they don't need a silicon pad/kapton tape and so have a clear advantage over the IRFP4368 and IXFK520N075T2 in terms of staying below their destructive operating temperature at high loading. The problem is, of the better performing packages only the IXFN520N075T2 can be purchased in small quantities from retailers....as far as I can tell.
http://search.digikey.com/scripts/d..._buynow&site=us&lang=en&name=IXFN520N075T2-ND