Futterama
1 kW
Hi forum,
I'm designing a 200A brushless controller and have read a fair bit on MOSFET gate driving.
I'm paralleling SMD devices and have read application notes about gate oscillations and how to avoid it. But I'm in doubt regarding the gate ferrite bead and gate resistor. Should those be placed as close as possible to the gate pin on the MOSFET or is it more important to route the gate path away from the high current paths (source-drain)?
I have two options:
1. Put the ferrite bead and if needed, the gate resistor real close to each MOSFET gate, but this will place the ferrite bead and resistor parallel to the high current path, increasing the coupling to the gate.
2. Route the gate trace away from the high current plane (using a 10mm short wire as "via") to another board where the gate driver is located and then locate the ferrite bead and gate resistor here with a ground plane between the high current paths and the gate drive circuitry.
See the board layout below. I started placing the ferrite bead next to the high current path, thinking it should be as close to the gate as possible.
Also, I have been reading a bit on MOSFET matching when paralleling devices, but it seemed to me that matching was only done when the MOSFETs should operate in their linear region. Is it a good idea to match the MOSFETs when paralleling devices in a PWM configuration or is that not necessary?
Thanks.
I'm designing a 200A brushless controller and have read a fair bit on MOSFET gate driving.
I'm paralleling SMD devices and have read application notes about gate oscillations and how to avoid it. But I'm in doubt regarding the gate ferrite bead and gate resistor. Should those be placed as close as possible to the gate pin on the MOSFET or is it more important to route the gate path away from the high current paths (source-drain)?
I have two options:
1. Put the ferrite bead and if needed, the gate resistor real close to each MOSFET gate, but this will place the ferrite bead and resistor parallel to the high current path, increasing the coupling to the gate.
2. Route the gate trace away from the high current plane (using a 10mm short wire as "via") to another board where the gate driver is located and then locate the ferrite bead and gate resistor here with a ground plane between the high current paths and the gate drive circuitry.
See the board layout below. I started placing the ferrite bead next to the high current path, thinking it should be as close to the gate as possible.
Also, I have been reading a bit on MOSFET matching when paralleling devices, but it seemed to me that matching was only done when the MOSFETs should operate in their linear region. Is it a good idea to match the MOSFETs when paralleling devices in a PWM configuration or is that not necessary?
Thanks.