Hello, I was wanting to know what evidence and calculations have people done on controller heat and PWM. It's posited by many in the RC forums that partial throttle greatly increases the temperature of the controller which is largely due to the ohmic region of mosfets during switching. However, is that really the case? People have put up "nice and pretty graphics" WITHOUT numbers and I can definitely tell the graphics have been exaggerated for purposes of demonstration, but people have furthermore taken the ill-proportioned graphics as direct evidence as to the magnitude of mosfet heating during the ohmic region.
So, I did some quickie calculations based on the 3006 Fairchild mosfet (A mosfet a little better than the 4110) and found that, yes, PWM resulted in average power dissipation on the order of 10 to 40 times as much during switching than when fully turned on. So, yes, everybody is correct that more heat is generated during switching than when the mosfet is fully turned on.
However, heat alone is somewhat misleading - the amount of "heating up" will also depend on the duration. One can dissipate 1 MW of power, but if you're dissipating that much for exactly one picosecond, you're only dissipating 1 milliJoule of thermal energy.
So, let's talk about duration. The amount of time to charge the gate's capacitor will depend on the gate resistance and the gate's capacitance as it's an RC circuit - there's also some ringing due to stray inductance, but we'll assume proper circuit design has minimized this (I wouldn't assume too much from cheap chinese electronics). The 3006 has a gate capacitance of ~7000 pf. With a 10 ohm gate resistor, the time constant is RC which is 10*7000*10^-12 = 7 x 10^-8 S = 70 nS: For "fully on", we'll assume two time constants which would be around 140 nS or .14 uS. The period of a 10 khz PWM signal is 100 uS - if the duty cycle is 50%, the on time is about 50 uS. Since there will be an on and off transition for the mosfet's ON time, the time to compare one transition with for heat generation will be 25 uS.
I calculated the heat generation for a mosfet at 50 watts when fully on when passing 130 amps in a "typical circuit". (It'll actually be lower in real life because any sane designer will parallel more mosfets, but it's OK for comparison purposes.) The same mosfet in that typical situation would generate something like 500-1000 watts when switching.
Thermal energy = power * time.
So,
The on-period's energy = 50 watts * 25 uS = 0.00125 joules
The switching energy = 1000 watts * .14 uS = 0.00014 joules.
The "heat" generated from being on is 10 times greater than the heat from switching in this "typical" example. However, the gate resistance is pretty critical. If the gate resistor is 100 ohm instead of the 10 ohm, it'd take 10 times as long to switch which would mean the switching would generate more heat than for the mosfet to just be simply fully on.
So, it appears that switching time has a lot to do with it. Anybody know typical controller gate resistances?
For 10 ohms, it appears the on-resistance dominates heat generation for this stellar mosfet. For 100 ohms, it appears the switching losses would dominate heat generation.
For those with crappier mosfets with higher resistances and/or higher gate capacitances, the results might turn out differently. Also, non-even current sharing during switching and/or pulse periods might also result in too high instantaneous power loss in a mosfet at a given moment resulting in instant FET destruction however proper circuit design should minimize this possibility.
So, I did some quickie calculations based on the 3006 Fairchild mosfet (A mosfet a little better than the 4110) and found that, yes, PWM resulted in average power dissipation on the order of 10 to 40 times as much during switching than when fully turned on. So, yes, everybody is correct that more heat is generated during switching than when the mosfet is fully turned on.
However, heat alone is somewhat misleading - the amount of "heating up" will also depend on the duration. One can dissipate 1 MW of power, but if you're dissipating that much for exactly one picosecond, you're only dissipating 1 milliJoule of thermal energy.
So, let's talk about duration. The amount of time to charge the gate's capacitor will depend on the gate resistance and the gate's capacitance as it's an RC circuit - there's also some ringing due to stray inductance, but we'll assume proper circuit design has minimized this (I wouldn't assume too much from cheap chinese electronics). The 3006 has a gate capacitance of ~7000 pf. With a 10 ohm gate resistor, the time constant is RC which is 10*7000*10^-12 = 7 x 10^-8 S = 70 nS: For "fully on", we'll assume two time constants which would be around 140 nS or .14 uS. The period of a 10 khz PWM signal is 100 uS - if the duty cycle is 50%, the on time is about 50 uS. Since there will be an on and off transition for the mosfet's ON time, the time to compare one transition with for heat generation will be 25 uS.
I calculated the heat generation for a mosfet at 50 watts when fully on when passing 130 amps in a "typical circuit". (It'll actually be lower in real life because any sane designer will parallel more mosfets, but it's OK for comparison purposes.) The same mosfet in that typical situation would generate something like 500-1000 watts when switching.
Thermal energy = power * time.
So,
The on-period's energy = 50 watts * 25 uS = 0.00125 joules
The switching energy = 1000 watts * .14 uS = 0.00014 joules.
The "heat" generated from being on is 10 times greater than the heat from switching in this "typical" example. However, the gate resistance is pretty critical. If the gate resistor is 100 ohm instead of the 10 ohm, it'd take 10 times as long to switch which would mean the switching would generate more heat than for the mosfet to just be simply fully on.
So, it appears that switching time has a lot to do with it. Anybody know typical controller gate resistances?
For 10 ohms, it appears the on-resistance dominates heat generation for this stellar mosfet. For 100 ohms, it appears the switching losses would dominate heat generation.
For those with crappier mosfets with higher resistances and/or higher gate capacitances, the results might turn out differently. Also, non-even current sharing during switching and/or pulse periods might also result in too high instantaneous power loss in a mosfet at a given moment resulting in instant FET destruction however proper circuit design should minimize this possibility.